XPS study of ultrathin carbon films prepared by filtered cathodic vacuum arc
نویسندگان
چکیده
منابع مشابه
Properties of nitrogen doped tetrahedral amorphous carbon films prepared by filtered cathodic vacuum arc technique
The properties of nitrogen doped tetrahedral amorphous carbon films prepared by the filtered cathodic vacuum arc technique have been studied. The doping species, nitrogen ions, were produced by an ion beam source. The nitrogen flow rate was varied from 0.5 to 10 sccm while keeping other deposition conditions constant. The nitrogen content in deposited films was determined by Rutherford backscat...
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The filtered cathodic vacuum arc technique was employed to deposit magnetic films such as FeNi on silicon substrate. Using the normal cathode design, tetrahedral amorphous carbon and metals films can be deposited. If a magnetic target is used, the arc spot always preferably moves to the edge of the target and then extinguishes. Therefore, the arc is not stable and no film can be deposited. A ca...
متن کاملCyclic Voltammetric Behavior of Nitrogen-Doped Tetrahedral Amorphous Carbon Films Deposited by Filtered Cathodic Vacuum Arc
Nitrogen-doped tetrahedral amorphous carbon (ta-C :N) films were deposited by filtered cathodic vacuum arc (FCVA) technique using nitrogen as a background gas. The structure of the ta-C :N films was studied with X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy in terms of nitrogen flow rate used during the film deposition. Potential windows of the films measured in deaerated and un...
متن کاملHeat treatment of tetrahedral amorphous carbon films grown by filtered cathodic vacuum-arc technique
Tetrahedral amorphous carbon (ta-C ) is a potential low-cost substitute for diamond in certain applications, but little is known of the temperature range over which its desirable properties are retained. The thermal stability of tetrahedral amorphous carbon (ta-C ) films has been investigated by heat treatment of the films at temperatures from room temperature to 450°C in high vacuum, low vacuu...
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Fabrication and characterization of nitrogenated tetrahedral amorphous carbon (ta-C:N) semiconductor/crystalline p-type silicon (p-Si) heterojunction structures are reported. The electron-hole pairs generated from both ta-C:N and Si depletion regions were observed from photoresponse measurements. The peaks are centered at about 540 and 1020 nm, which correspond to the optical absorption edge of...
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ژورنال
عنوان ژورنال: e-Journal of Surface Science and Nanotechnology
سال: 2006
ISSN: 1348-0391
DOI: 10.1380/ejssnt.2006.129